| PART |
Description |
Maker |
| 20HS3LL- STS20NHS3LL |
N-CHANNEL 30 V - 0.0032 Ω - 20 A SO-8 STripFET?III MOSFET PLUS MONOLITHIC SCHOTTKY
N-CHANNEL 30 V - 0.0032 ヘ - 20 A SO-8 STripFET⑩III MOSFET PLUS MONOLITHIC SCHOTTKY
N-CHANNEL 30 V - 0.0032 惟 - 20 A SO-8 STripFET?⑸II MOSFET PLUS MONOLITHIC SCHOTTKY
|
ETC
List of Unclassifed Manufacturers
|
| IRF8306MPBF |
Integrated Monolithic Schottky Diode
|
International Rectifier
|
| SB80W06T |
Schottky Barrier Diode 60V, 8A, Low IR, Monolithic Dual TP Common Cathode
|
ON Semiconductor
|
| STS20NHS3LL07 STS20NHS3LL 20HS3LL- |
N-channel 30V - 0.0032ohm - 20A - SO-8 STripFET III Power MOSFET plus monolithic schottky
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| ENA1055 |
Schottky Barrier Diode, 30V, 1A, Low IR, Non-Monolithic Dual CPH5 Common Cathode
|
ON Semiconductor
|
| ENA1379 |
Schottky Barrier Diode, 30V, 2A, Low IR, Non-Monolithic Dual EMH8 Common Cathode
|
ON Semiconductor
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| LS831PDIP |
MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
|
Micross Components
|
| LS301PDIP |
MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
|
Micross Components
|
| MQF10.7-1500/22 MQF21.4-3000-03 MQF10.7-1500-22 MQ |
Monolithic crystal filter 单片晶体滤波
Monolithic Crystal Filter 10.7 MHz, Channel spacing 25 kHz
|
Vectron International, Inc.
|
